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参数资料
| 型号： | 2SK3305-S |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | TO-262, MP-25 FIN CUT, 3 PIN |
| 文件页数： | 10/10页 |
| 文件大小： | 271K |
| 代理商： | 2SK3305-S |
Data Sheet D14003EJ2V0DS
7
2SK3305
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6 ±0.2
4
3.0
±0.3
1.3 ±0.2
0.75 ±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3 ±0.2
0.5 ±0.2
2.8 ±0.2
φ
4.8 MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
10 TYP.
1.3 ±0.2
0.75 ±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3 ±0.2
0.5 ±0.2
2.8 ±0.2
1.0
±0
.5
4
3) TO-263 (MP-25ZJ)
1.4 ±0.2
1.0
±0.5
2.54 TYP.
8.5
±0.2
123
5.7
±0.4
4
4.8 MAX.
1.3 ±0.2
0.5 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.7 ±0.2
10 TYP.
0.5R
TYP.
0.8R
TYP.
2.8
±0.2
EQUIVALENT CIRCUIT
Source (S)
Body
Diode
Gate (G)
Drain (D)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3307 | 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3313 | 12 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3320 | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3320Y | SMALL SIGNAL, FET |
| 2SK3320BL | SMALL SIGNAL, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3305-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3305-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) TO-263 T/R Cut Tape |
| 2SK3305-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3306 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3306-AZ | 制造商:Renesas Electronics 功能描述:Nch 500V 5A 1500m@10V IsolatedTO220 Bulk |
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