参数资料
型号: 2SK3305-S
元件分类: JFETs
英文描述: 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封装: TO-262, MP-25 FIN CUT, 3 PIN
文件页数: 5/10页
文件大小: 271K
代理商: 2SK3305-S
Data Sheet D14003EJ2V0DS
2
2SK3305
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
100
A
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 2.5 A
1.0
3.0
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 2.5 A
1.1
1.5
Input Capacitance
Ciss
VDS = 10 V
700
pF
Output Capacitance
Coss
VGS = 0 V
115
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
6
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 2.5 A
16
ns
Rise Time
tr
VGS = 10 V
3
ns
Turn-off Delay Time
td(off)
RG = 10
33
ns
Fall Time
tf
RL = 60
5.5
ns
Total Gate Charge
QG
VDD = 400 V
13
nC
Gate to Source Charge
QGS
VGS = 10 V
4
nC
Gate to Drain Charge
QGD
ID = 5.0 A
4.5
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 5.0 A, VGS = 0 V
0.9
V
Reverse Recovery Time
trr
IF = 5.0 A, VGS = 0 V
0.6
s
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
3.3
C
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相关代理商/技术参数
参数描述
2SK3305-Z(AZ) 制造商:Renesas Electronics Corporation 功能描述:
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2SK3306-AZ 制造商:Renesas Electronics 功能描述:Nch 500V 5A 1500m@10V IsolatedTO220 Bulk