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参数资料
| 型号： | 2SK3309(2-10S1B) |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-10S1B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 232K |
| 代理商： | 2SK3309(2-10S1B) |
2SK3309
2002-09-04
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3309
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.48 (typ.)
High forward transfer admittance: |Yfs| = 4.3 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 450 V)
Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 kW)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
10
Drain current
Pulse
(Note 1)
IDP
40
A
Drain power dissipation (Tc
= 25°C)
PD
65
W
Single pulse avalanche energy
(Note 2)
EAS
222
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
6.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.92
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Note 1: Please use devise on condition that the channel temperature is
below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 W,
IAR = 10 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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