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参数资料
| 型号： | 2SK3309(2-10S1B) |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-10S1B, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 232K |
| 代理商： | 2SK3309(2-10S1B) |
2SK3309
2002-09-04
4
D
rai
n
po
w
er
di
ssi
pa
tion
P
D
(W
)
Gate
th
res
hol
dvol
ta
ge
V
th
(V
)
Case temperature Tc
(°C)
RDS (ON) – Tc
D
rai
n
-so
urc
eon
resi
st
a
nce
R
DS
(ON)
(W
)
Drain-source voltage VDS (V)
IDR – VDS
D
rai
n
re
ver
se
c
ur
re
nt
I DR
(A
)
Drain-source voltage VDS (V)
Capacitance – VDS
C
apaci
tanc
e
C
(p
F)
Case temperature Tc
(°C)
Vth – Tc
Case temperature Tc
(°C)
PD – Tc
Gate
-so
ur
ce
vo
ltage
V
GS
(V
)
Total gate charge Qg (nC)
Dynamic input/output characteristics
D
rai
n
-so
urc
ev
ol
ta
ge
V
DS
(V
)
0
20
60
40
100
80
200
0
40
80
120
160
500
400
0
100
200
300
0
10
20
30
50
40
Common source
ID = 10 A
Tc
= 25°C
Pulse test
VDS
360
180
VGS
VDD = 90 V
0
4
8
12
20
16
160
0
1
3
2
6
5
4
-80
-40
0
40
80
120
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
0.01
-0.4
0.1
1
10
100
-0.6
-0.8
-1.2
5
-0.2
-1
10
1
3
VGS = 0, -1 V
Common source
Tc
= 25°C
Pulse test
1
0.1
10
100
1000
10000
1
10
100
1000
Common
source
VGS = 0 V
f
= 1 MHz
Ciss
Coss
Crss
2.0
1.2
0
-80
-40
0
40
80
160
120
0.4
0.8
ID = 10 A
2.5
5
1.6
Common source
VGS = 10 V
Pulse test
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PDF描述 |
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| 2SK3324-A | 6 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3325-AZ | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK330BL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SPAK |
| 2SK330GR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 2.6MA I(DSS) | SPAK |
| 2SK330-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK330Y | 制造商:Toshiba 功能描述:Trans JFET N-CH 3mA 3-Pin 2-4E1B 制造商:Toshiba 功能描述:Trans JFET N-CH 3mA 3-Pin 2-4E1B Bulk |
| 2SK3310 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
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