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参数资料
| 型号： | 2SK3324-A |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-88, TO-3P, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 69K |
| 代理商： | 2SK3324-A |
Data Sheet D14203EJ2V0DS00
2
2SK3324
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain Leakage Current
IDSS
100
AVDS = 900 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
±100
nA
VGS = ±30 V, VDS = 0 V
Gate to Source Cut-off Voltage
VGS(off)
2.5
3.5
V
VDS = 10 V, ID = 1.0 mA
Forward Transfer Admittance
| yfs |
2.5
3.3
S
VDS = 20 V, ID = 3.0 A
Drain to Source On-state Resistance
RDS(on)
2.5
2.8
VGS = 10 V, ID = 3.0 A
Input Capacitance
Ciss
1000
pF
Output Capacitance
Coss
200
pF
Reverse Transfer Capacitance
Crss
42
pF
VDS = 10 V,
VGS = 0 V,
f = 1 MHz
Turn-on Delay Time
td(on)
17
ns
Rise Time
tr
38
ns
Turn-off Delay Time
td(off)
57
ns
Fall Time
tf
33
ns
VDD = 150 V,
ID = 3.0 A,
VGS(on) = 10 V,
RG = 10
, RL = 10
Total Gate Charge
QG
32
nC
Gate to Source Charge
QGS
5nC
Gate to Drain Charge
QGD
20
nC
VDD = 450 V,
VGS = 10 V,
ID = 6.0 A
Body Diode Forward Voltage
VF(S-D)
0.9
V
IF = 6.0 A, VGS = 0 V
Reverse Recovery Time
trr
1.9
s
Reverse Recovery Charge
Qrr
9.0
C
IF = 6.0 A, VGS = 0 V,
di/dt = 50 A/
s
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
td(on)
tr td(off)
tf
10 %
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相关代理商/技术参数 |
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