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参数资料
| 型号： | 2SK3325-AZ |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 77K |
| 代理商： | 2SK3325-AZ |
Data Sheet D14264EJ1V0DS00
7
2SK3325
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
2)TO-262 (MP-25 Fin Cut)
3)TO-263 (MP-25ZJ)
EQUIVALENT CIRCUIT
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
(10)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
2.8±0.2
4.8 MAX.
1.3±0.2
0.5±0.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
Source
Body
Diode
Gate
Drain
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it once, when it has occurred.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3325-ZJ | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3326B-S17-AY | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3326 | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3326-AZ | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3335(TP) | 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3325-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3325-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3325-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 10A 3-Pin(2+Tab) TO-263 Cut Tape |
| 2SK3325-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3326 | 制造商:JVC Worldwide 功能描述:500V 10A 40W Nec Fet TO-220Ab N-Channel |
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