参数资料
型号: 2SK3326-AZ
元件分类: JFETs
英文描述: 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: MP-45F, ISOLATED TO-220, 3 PIN
文件页数: 10/10页
文件大小: 198K
代理商: 2SK3326-AZ
Data Sheet D14204EJ1V0DS00
7
2SK3326
PACKAGE DRAWING (Unit: mm)
Isolated TO-220(MP-45F)
Remark
Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
1. Gate
2. Drain
3. Source
10.0±0.3
3.2±0.2
2.7±0.2
1.3±0.2
0.7±0.1
2.54
1.5±0.2
12 3
4±0.2
13.5
MIN.
12.0±0.2
15.0±0.3
3±0.1
4.5±0.2
2.5±0.1
0.65±0.1
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