参数资料
型号: 2SK3326-AZ
元件分类: JFETs
英文描述: 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: MP-45F, ISOLATED TO-220, 3 PIN
文件页数: 6/10页
文件大小: 198K
代理商: 2SK3326-AZ
Data Sheet D14204EJ1V0DS00
3
2SK3326
TYPICAL CHARACTERISTICS(TA = 25 °C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40
60
100
120
140
160
20
40
60
80
100
Tc - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
020
80
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
40
60
80
100
120
140
160
Tc - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
50
40
30
20
10
Figure3. FORWARD BIAS SAFE OPERATING AREA
100
10
0.1
10
100
1000
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
1
Power
Dissipation
Limited
10
ms
ID (DC)
ID (pulse)
100
s
Tc = 25 C
Single Pulse
PW
=
10
s
1ms
R
DS(on)
Limited
(at
V
GS
= 10
V)
100
ms
Figure4. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
4
8
12
16
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
20
10
Pulsed
VGS = 20 V
10 V
8.0 V
VGS = 6.0 V
Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
0
VGS - Gate to Source Voltage - V
Pulsed
100
10
0.0001
0.001
ID
-
Drain
Current
-
A
0.01
0.1
1
510
15
TA = –25 C
25 C
75 C
125 C
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