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参数资料
| 型号： | 2SK3338-01 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | TRANS PREBIASED PNP 200MW SOT323 |
| 中文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 109K |
| 代理商： | 2SK3338-01 |
1
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
V
GS
I
AR *2
E
AV *1
P
D
T
ch
T
stg
Rating
500
±20
±80
±30
Unit
V
A
A
V
A
mJ
W
°C
20
775
340
+150
-55 to +150
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3338-01
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=500V
V
ch
=25°C
V
GS
=0V T
ch
=125°C
=±30V
DS
=0V
V
GS
I
D
=10A V
GS
=10V
I
D
=10A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=20A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
500
2.5
3.0
10
0.2
10
0.21
9
18
3350
480
200
27
100
250
100
155
38
50
20
1.1
600
11.0
V
V
μA
mA
nA
S
pF
nC
A
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.368
50.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
Vcc=250V
I
D
=20A
V
GS
=10V
L=3.56 mH T
ch
=25°C
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
*1 L=3.56mH, Vcc=50V *2 Tch<
3.5
500
1.0
100
0.27
5025
720
300
40
150
375
150
235
60
75
1.65
Gate(G)
Source(S)
Drain(D)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3339-01 | N-CHANNEL SILICON POWER MOS-FET |
| 2SK3340-01 | N-CHANNEL SILICON POWER MOS-FET |
| 2SK3341-01 | N-CHANNEL SILICON POWER MOS-FET |
| 2SK3342 | CONTACT |
| 2SK334 | Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3338-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3339-01 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK3339-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK333D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 80V V(BR)DSS | 1.2MA I(DSS) | DIP |
| 2SK333E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | DUAL | 80V V(BR)DSS | 2.5MA I(DSS) | DIP |
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