参数资料
型号: 2SK3356
元件分类: JFETs
英文描述: 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: MP-88, TO-3P, 3 PIN
文件页数: 2/8页
文件大小: 67K
代理商: 2SK3356
Data Sheet D14133EJ3V0DS
2
2SK3356
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 38 A35
57
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 38 A6.3
8.0
m
RDS(on)2
VGS = 4 V, ID = 38 A8.0
12
m
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
6300
pF
Output Capacitance
Coss
1000
pF
Reverse Transfer Capacitance
Crss
490
pF
Turn-on Delay Time
td(on)
ID = 38 A, VGS(on) = 10 V, VDD = 30 V,
90
ns
Rise Time
tr
RG = 10
1000
ns
Turn-off Delay Time
td(off)
300
ns
Fall Time
tf
400
ns
Total Gate Charge
QG
ID = 75 A , VDD = 48 V, VGS = 10 V
106
nC
Gate to Source Charge
QGS
20
nC
Gate to Drain Charge
QGD
30
nC
Body Diode Forward Voltage
VF(S-D)
IF = 75 A, VGS = 0 V1.0
V
Reverse Recovery Time
trr
IF = 75 A, VGS = 0 V,
55
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
100
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
td(on)
tr td(off)
tf
10 %
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
相关PDF资料
PDF描述
2SK3356-AZ 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3356-AZ 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
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