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参数资料
| 型号： | 2SK3356 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-88, TO-3P, 3 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 67K |
| 代理商： | 2SK3356 |
Data Sheet D14133EJ3V0DS
7
2SK3356
PACKAGE DRAWING (Unit: mm)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
TO-3P (MP-88)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
15.7 MAX.
3.2±0.2
4.5±0.2
6.0
1.0
3.0±0.2
20.0±0.2
19
MIN.
2.2±0.2
5.45
1.0±0.2
4
4.7 MAX.
1.5
7.0
2.8±0.1
0.6±0.1
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3356-AZ | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3356-AZ | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3359 | 70 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3365-AZ | 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3365-AZ | 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3357 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3357-A | 制造商:Renesas Electronics 功能描述:Nch 60V 75A 5.8m@10V TO3P Cut Tape 制造商:Renesas Electronics 功能描述:Nch 60V 75A 5.8m@10V TO3P Bulk 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,75A,4.6m ohm,TO-3P |
| 2SK3358 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3358-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3358-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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