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参数资料
| 型号： | 2SK3359 |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 48K |
| 代理商： | 2SK3359 |
Preliminary Data Sheet D14323EJ1V0DS00
3
2SK3359
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
2)TO-262 (MP-25 Fin Cut)
3)TO-220SMD (MP-25Z)
EQUIVALENT CIRCUIT
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
(10)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
3.0±0.5
11±0.4
4
2.8±0.2
4.8 MAX.
1.3±0.2
0.5±0.2
(0.5R)
(0.8R)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1.0±0.3
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3365-AZ | 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3365-AZ | 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3365-Z-AZ | 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 |
| 2SK3366-Z | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3366-Z-AZ | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3359-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3359-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK336 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 400MA I(D) | TO-92 |
| 2SK3360 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3361 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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