参数资料
型号: 2SK3365-AZ
元件分类: 小信号晶体管
英文描述: 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
封装: MP-3, 3 PIN
文件页数: 2/8页
文件大小: 422K
代理商: 2SK3365-AZ
Data Sheet D14255EJ2V0DS
2
2SK3365
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 15 A
11.5
14
m
RDS(on)2
VGS = 4.5 V, ID = 15 A
15.2
21
m
RDS(on)3
VGS = 4.0 V, ID = 15 A
18
29
m
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 15 A
8.0
16.0
S
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
A
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Input Capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1300
pF
Output Capacitance
Coss
405
pF
Reverse Transfer Capacitance
Crss
190
pF
Turn-on Delay Time
td(on)
ID = 15 A, VGS(on) = 10 V, VDD = 15 V,
37
ns
Rise Time
tr
RG = 10
500
ns
Turn-off Delay Time
td(off)
75
ns
Fall Time
tf
95
ns
Total Gate Charge
QG
ID = 30 A, VDD = 24 V, VGS = 10 V
25
nC
Gate to Source Charge
QGS
4.5
nC
Gate to Drain Charge
QGD
7.0
nC
Body Diode forward Voltage
VF(S-D)
IF = 30 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 30 A, VGS = 0 V
35
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s32
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RL
VDD
RG
RG = 10
PG.
Duty Cycle
≤ 1 %
VGS (on)
90 %
0
10 %
90 %
ID
0
10 %
ID
VGS
90 %
10 %
td (on)
ton
toff
tr
td (off)
tf
VGS
Wave Form
ID
Wave Form
D.U.T.
50
PG.
VDD
IG = 2 mA
RL
0
VGS
τ
s
τ = 1
相关PDF资料
PDF描述
2SK3365-AZ 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3365-Z-AZ 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252
2SK3366-Z 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SK3366-Z-AZ 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SK3366 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
相关代理商/技术参数
参数描述
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