- 您现在的位置：买卖IC网 > PDF目录50003 > 2SK3373 2 A, 500 V, 3.2 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3373 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 500 V, 3.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 186K |
| 代理商： | 2SK3373 |
2SK3373
2005-03-04
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
2SK3373
Switching Regulator and DC/DC Converter Applications
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 2.9 m (typ.)
High forward transfer admittance: |Yfs| = 1.7 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 500 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS = 20 k)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
2
Pulse (t
= 1 ms)
(Note 1)
IDP
5
Drain current
Pulse (t
= 100 s)
(Note 1)
IDP
12
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
112
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 48.4 mH, RG = 25 , IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3376MFV | 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3376TV | 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3377-Z-AZ | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3377 | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
| 2SK3377-Z-AZ | 20000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3373(TE16L1,NQ) | 功能描述:MOSFET MOSFET N-Ch 500V 2A Rdson=3.2Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3373_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N-Channel MOS Type Switching Regulator and DC/DC Converter Applications Motor Drive Applications |
| 2SK3373_10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SK3374 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) |
| 2SK3374_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
发布紧急采购，3分钟左右您将得到回复。