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参数资料
| 型号： | 2SK3376MFV |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | 2-1L1C, VESM, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 152K |
| 代理商： | 2SK3376MFV |
2SK3376MFV
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3376MFV
For ECM
Application for Ultra-compact ECM
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain power dissipation (Ta
= 25°C)
PD (Note 1)
150
mW
Junction Temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on FR4 board
IDSS CLASSIFICATION
A-Rank
80 to 200A
B-Rank
170 to 300A
C-Rank
270 to 480A
BK-Rank
150 to 350A
Marking
Equivalent Circuit
Unit: mm
JEDEC
-
JEITA
-
TOSHIBA
2-1L1C
Weight: 1.5mg (typ.)
VESM
1.Drain
2.Source
3.Gate
D
G
S
IDSS Classification Symbol
A :A-Rank
B :B-Rank , BK-Rank
Type Name
3
C :C-Rank
1.
2±
0.
05
0.
32
±0
.0
5
1
2
3
0.
4
0.
4
0.
22
±
0.
05
0.8±0.05
0.
8±
0.
05
1.2±0.05
0.
5±
0.
05
0.
13
±
0.
05
0.5mm
0.45mm
0.4mm
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3376MFV-BK | 0.39 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3376TK | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3376TK-BK | 0.39 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3376TK-A | 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3385 | 30000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3376TK | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For ECM |
| 2SK3376TV | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For ECM |
| 2SK3377 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3377-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) TO-251 Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,20A,35m ohm,TO-251 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) TO-251 |
| 2SK3377-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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