- 您现在的位置：买卖IC网 > PDF目录50003 > 2SK3386-AZ 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 PDF资料下载
参数资料
| 型号： | 2SK3386-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 34000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 140K |
| 代理商： | 2SK3386-AZ |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3386
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14471EJ3V0DS00 (3rd edition)
Date Published
August 2004 NS CP(K)
Printed in Japan
The mark
★ shows major revised points.
1999, 2000
DESCRIPTION
The 2SK3386 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low On-state Resistance
RDS(on)1 = 21 m
MAX. (VGS = 10 V, ID = 17 A)
RDS(on)2 = 36 m
MAX. (VGS = 4.0 V, ID = 17 A)
Low Ciss : Ciss = 2100 pF TYP.
Built-in Gate Protection Diode
TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±34
A
Drain Current (Pulse)
Note1
ID(pulse)
±120
A
Total Power Dissipation (TC = 25°C)
PT
40
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
28
A
Single Avalanche Energy
Note2
EAS
78
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3386
TO-251 (MP-3)
2SK3386-Z
TO-252 (MP-3Z)
(TO-251)
(TO-252)
★
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3388 | 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3389 | 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3390IXTB-E | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 2SK3399(2-10S2B) | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3403(2-10S1B) | 13 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3386-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3386-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 34A 21m@10V TO252 Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) TO-252 |
| 2SK3386-Z-E1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3387 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) |
| 2SK3387(TE24L,Q) | 功能描述:MOSFET N-ch 150V 18A 0.08 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。