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参数资料
| 型号： | 2SK3390IXTB-E |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | RP8P, 2 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 151K |
| 代理商： | 2SK3390IXTB-E |
REJ03G0208-0400 Rev.4.00 Nov 08, 2007
Page 1 of 9
2SK3390
Silicon N-Channel MOS FET
UHF Power Amplifier
REJ03G0208-0400
Rev.4.00
Nov 08, 2007
Features
High power output, High gain, High efficiency
PG = 17 dB, Pout = 6.31 W,
ηadd = 60% min. (f = 836 MHz)
Compact package capable of surface mounting
Outline
1
2
3
RENESAS Package code : PLSS0003ZA-A
(Package name: RP8P)
D
G
S
1
2
3
1. Gate
2. Source
3. Drain
Note:
Marking is “IX”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
17
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
1
A
Drain peak current
ID(pulse)
Note1
2.5
A
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Notes: 1. PW
< 1sec, Tch < 150°C
2. Value at Tc = 25
°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3391 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391_07 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391JX | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391JXTL | 功能描述:MOSFET N-CH 17V 300MA UPAK RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| 2SK3391JXTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
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