参数资料
型号: 2SK3390IXTB-E
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: RP8P, 2 PIN
文件页数: 4/10页
文件大小: 151K
代理商: 2SK3390IXTB-E
2SK3390
REJ03G0208-0400 Rev.4.00 Nov 08, 2007
Page 3 of 9
29
25
24
-10
- 6
- 2
2
610
VDS = 0
f = 1 MHz
26
27
28
1
3
10
30
1
10
100
30
3
0.1
0.3
VGS = 0
f = 1 MHz
1
3
10
30
1
0.3
10
0.1
3
0.1
0.3
VGS = 0
f = 1 MHz
0
200
150
100
50
10
8
4
2
00
100
60
40
20
6
80
250
VDS = 13.7 V
IDQ = 250 mA
f = 836 MHz
Pout
ηadd
0.1
0.03
0.3
10
13
0.01
0.03
0.1
0.3
3
10
1
0.01
0.001
0.003
3.6
3.2
2.8
2.4
2.0
1.6
- 25
0
25
50
75
100
125
VDS = 13.7 V
10 mA
ID = 0.1
mA
1 mA
75
°C
25
°C
Tc = - 25
°C
VGS = 10 V
Pulse Test
Input Capacitance vs.
Gate to Source Voltage
Input
Capacitance
Ciss
(pF)
Gate to Source Voltage VGS (V)
Output Capacitance vs.
Drain to Source Voltage
Output
Capacitance
Coss
(pF)
Drain to Source Voltage VDS (V)
Reverse Transfer Capacitance vs.
Drain to Gate Voltage
Drain to Gate Voltage VDG (V)
Reverse
Transfer
Capacitance
Crss
(pF)
Added
Efficiency
η
add
(%)
Input power Pin (mW)
Output Power, Added Efficiency vs.
Input Power
Output
Power
Pout
(W)
Drain to Source Saturation Voltage vs.
Drain Current
V
DS
(sat)
(V)
Drain
to
Source
Saturation
Voltage
Drain Current ID (A)
Ambient Temperature Ta (
°C)
Gate
to
Source
Cutoff
Voltage
Gate to Source Cutoff Voltage vs.
Ambient Temperature
V
GS
(off)
(V)
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