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参数资料
| 型号： | 2SK3390IXTB-E |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | RP8P, 2 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 151K |
| 代理商： | 2SK3390IXTB-E |
2SK3390
REJ03G0208-0400 Rev.4.00 Nov 08, 2007
Page 2 of 9
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min.
Typ
Max.
Unit
Test Conditions
Zero gate voltage drain current
IDSS
—
10
A
VDS = 13.7 V, VGS = 0
Gate to source leak current
IGSS
—
±5
A
VGS = ±10 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
2.2
—
3.0
V
VDS = 13.7 V, ID = 1 mA
Input capacitance
Ciss
—
27.5
—
pF
VGS = 5 V, VDS = 0, f = 1 MHz
Output capacitance
Coss
—
10.5
—
pF
VDS = 13.7 V, VGS = 0, f = 1 MHz
Output Power
Pout
6.31
—
W
Added Efficiency
ηadd
60
—
%
VDS = 13.7 V, IDQ = 250 mA
f = 836 MHz, Pin = 126 mW
Main Characteristics
40
30
20
10
0
50
100
150
200
Channel
Power
Dissipation
Pch
(W)
Case Temperature Tc (
°C)
Maximum Channel Power
Dissipation Curve
2.5
2
1.5
1
0.5
0
2
34567
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
5
4
3
2
1
02
4
6
8
10
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
0.01
1
0.3
0.03
0.1
0.03
0.1
0.3
1
3
10
0.01
Drain Current ID (A)
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
3
10
VDS = 13.7 V
Pulse Test
Tc = - 25
°C
25
°C
75
°C
VDS = 13.7 V
Pulse Test
Tc = 75
°C
25
°C
- 25
°C
VGS = 4 V
6 V
5 V
Pulse Test
8 V
10 V
7 V
9 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3391 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391_07 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391JX | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391JXTL | 功能描述:MOSFET N-CH 17V 300MA UPAK RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| 2SK3391JXTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
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