参数资料
型号: 2SK3417
厂商: Toshiba Corporation
元件分类: 基准电压源/电流源
英文描述: RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述: 抗辐射高效,5安培开关稳压器
文件页数: 2/7页
文件大小: 249K
代理商: 2SK3417
2SK3417
2002-08-12
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
25 V, V
DS
0 V
10
A
Drain-source breakdown voltage
V
(BR) GSS
I
G
100 A, V
DS
0 V
30
V
Drain cut-OFF current
I
DSS
V
DS
500 V, V
GS
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
10 mA, V
GS
0 V
500
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
10 V, I
D
2.5 A
1.6
1.8
Forward transfer admittance
Y
fs
V
DS
10 V, I
D
2.5 A
2.5
4.0
S
Input capacitance
C
iss
780
Reverse transfer capacitance
C
rss
60
Output capacitance
C
oss
V
DS
10 V, V
GS
0 V, f 1 MHz
200
pF
Rise time
t
r
12
Turn-ON time
t
on
25
Fall time
t
f
15
Switching time
Turn-OFF time
t
off
60
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
17
Gate-source charge
Q
gs
11
Gate-drain (“miller”) charge
Q
gd
V
DD
400 V, V
GS
10 V, I
D
5 A
6
nC
Source-Drain Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
5
A
Pulse drain reverse current
(Note 1)
I
DRP
20
A
Forward voltage (diode)
V
DSF
I
DR
5 A, V
GS
0 V
1.7
V
Reverse recovery time
t
rr
60
ns
Reverse recovery charge
Q
rr
I
DR
5 A, V
GS
0 V,
dI
DR
/dt 100 A/ s
0.1
C
Marking
Type
K3417
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty
1%, t
w
10 s
0 V
10 V
V
GS
R
L
90
V
DD
225 V
I
D
2.5 A
V
OUT
1
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