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参数资料
| 型号： | 2SK3426 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | For Impedance Conversion In Low Frequency |
| 中文描述： | 0.46 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | ROHS COMPLIANT, SSSMINI3-F1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 59K |
| 代理商： | 2SK3426 |
Silicon Junction FETs (Small Signal)
2SK3426
Silicon N-Channel Junction
1
Publication date: April 2002
SJF00033AED
For impedance conversion in low frequency
For electret capacitor microphone
I
Features
High mutual conductance g
m
Low noise voltage of NV
I
Absolute Maximum Ratings
T
a
=
25
°
C
1: Drain
2: Source
3: Gate
SSSMini3-F1 Package
Unit: mm
Parameter
Symbol
Rating
Unit
Drain-source voltage
V
DSO
20
V
Drain-gate voltage
V
DGO
I
DSO
I
DGO
20
V
Drain-source current
2
mA
Drain-gate current
2
mA
Gate-source current
I
GSO
P
D
T
opr
2
mA
Allowable power dissipation
100
mW
Operating ambient temperature
20 to
+
80
55 to
+
125
°
C
°
C
Storage temperature
T
stg
Marking Symbol: 4E
Parameter
Symbol
I
D *1
Conditions
Min
Typ
Max
Unit
Drain current
V
DS
=
2.0 V, R
D
=
2.2 k
±
1%
V
DS
=
2.0 V, R
D
=
2.2 k
±
1%, V
GS
=
0
V
D
=
2.0 V, V
GS
=
0, f
=
1 kHz
V
D
=
2.0 V, R
D
=
2.2 k
±
1%
C
O
=
5 pF, A-Curve
V
D
=
2.0 V, R
D
=
2.2 k
±
1%
C
O
=
5 pF, e
G
=
10 mV, f
=
1 kHz
V
D
=
12 V, R
D
=
2.2 k
±
1%
C
O
=
5 pF, e
G
=
10 mV, f
=
1 kHz
V
D
=
1.5 V, R
D
=
2.2 k
±
1%
C
O
=
5 pF, e
G
=
10 mV, f
=
1 kHz
V
D
=
2.0 V, R
D
=
2.2 k
±
1%
C
O
=
5 pF, e
G
=
10 mV, f
=
1 kHz to 70 Hz
100
330
μ
A
I
DSS
g
m
NV
107
310
Mutual conductance
660
1
300
μ
S
μ
V
Noise voltage
8
Voltage gain
G
V1
8.5
3.0
dB
G
V2
5.0
0.5
G
V3
9.0
3.5
G
V
. f
*2
0
1.5
Voltage gain difference
G
V2
G
V1
G
V1
G
V3
0
4.0
dB
0
1.5
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note)*1: I
D
is assured for I
DSS
.
*2:
G
V
. f
is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)
1
±
0
0
±
0
0
0
5
0
0
±
0
0
0.33
(0.40)
(0.40)
0.80
±
0.05
1.20
±
0.05
1
2
3
5
+0.05
0.10
+0.05
0.23
+0.05
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