- 您现在的位置：买卖IC网 > PDF目录33498 > 2SK3424-AZ 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | 2SK3424-AZ |
| 元件分类： | JFETs |
| 英文描述： | 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 67K |
| 代理商： | 2SK3424-AZ |
Data Sheet D14640EJ2V0DS
2
2SK3424
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 24 A
13
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 24 A
7.7
11.5
m
RDS(on)2
VGS = 4.5 V, ID = 24 A
10.5
17.0
m
Input Capacitance
Ciss
VDS = 10 V
1900
pF
Output Capacitance
Coss
VGS = 0 V
580
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
270
pF
Turn-on Delay Time
td(on)
VDD = 15 V , ID = 24 A
14
ns
Rise Time
tr
VGS(on) = 10 V
13
ns
Turn-off Delay Time
td(off)
RG = 10
61
ns
Fall Time
tf
22
ns
Total Gate Charge
QG
VDD = 24 V
34
nC
Gate to Source Charge
QGS
VGS = 10 V
6.4
nC
Gate to Drain Charge
QGD
ID = 48 A
9.1
nC
Diode Forward Voltage
VF(S-D)
IF = 48 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 48 A, VGS = 0 V
34
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
26
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
VDS
Wave Form
VGS
10%
90%
10%
0
VDS
90%
td(on)
tr
td(off)
tf
τ
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3430-ZJ | 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3430-Z-AZ | 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3430-Z | 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3431-Z | 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3431-S | 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3424-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3424-ZK | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3426 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Impedance Conversion In Low Frequency |
| 2SK34260TL | 功能描述:JFET N-CH 20V 2MA SSSMINI-3 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| 2SK3427 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction |
发布紧急采购，3分钟左右您将得到回复。