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参数资料
| 型号： | 2SK3424-AZ |
| 元件分类： | JFETs |
| 英文描述： | 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 67K |
| 代理商： | 2SK3424-AZ |
Data Sheet D14640EJ2V0DS
3
2SK3424
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
2
4
3
100
200
150
1
Pulsed
VGS =10 V
50
7.0 V
4.5 V
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
Pulsed
12
3
4
56
VDS = 10 V
10
1
0.1
100
1000
Tch =
40C
25C
75C
125C
150C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
VDS = 10 V
ID = 1 mA
1.0
1.5
0.5
2.0
2.5
3.0
50
0
50
100
150
0
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
Pulsed
VDS = 10 V
10
1
100
0.1
0.01
0.1
1
10
100
Tch = 150C
75C
25C
40C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
10
515
20
15
20
5
10
Pulsed
ID = 48 A
24 A
10 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
10
1
0.1
20
30
1000
100
Pulsed
0
VGS = 4.5 V
7.0 V
10 V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3430-ZJ | 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3430-Z-AZ | 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3430-Z | 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3431-Z | 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3431-S | 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3424-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3424-ZK | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3426 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Impedance Conversion In Low Frequency |
| 2SK34260TL | 功能描述:JFET N-CH 20V 2MA SSSMINI-3 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| 2SK3427 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction |
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