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参数资料
| 型号： | 2SK3437(2-10S1B) |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 209K |
| 代理商： | 2SK3437(2-10S1B) |
2SK3437
2010-01-29
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
2SK3437
DC-DC Converter, Relay Drive and Motor Drive
Applications
Low drain-source ON-resistance: RDS (ON) = 0.74 (typ.)
High forward transfer admittance: |Yfs| = 4.5 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
DC (Note 1)
ID
10
Drain current
Pulse
(Note 1)
IDP
30
A
Drain power dissipation (Tc
= 25°C)
PD
80
W
Single pulse avalanche energy
(Note 2)
EAS
252
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.56
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.41 mH, RG = 25 Ω,
IAR = 10 A
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3438 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC-DC Converter, Relay Drive and Motor Drive Applications |
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| 2SK3439 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:DC-DC Converter Relay Drive and Motor Drive Applications |
| 2SK3439_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC-DC Converter Applications |
| 2SK3439_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:DC-DC Converter Applications |
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