参数资料
型号: 2SK3439
元件分类: JFETs
英文描述: 75 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: SC-97, 4 PIN
文件页数: 1/6页
文件大小: 197K
代理商: 2SK3439
2SK3439
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3439
DC-DC Converter Applications
Relay Drive and Motor Drive Applications
Low drain-source ON resistance: RDS (ON) = 3.8 m (typ.)
High forward transfer admittance: |Yfs| = 70 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 30 V)
Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
75
Drain current
Pulse (t <
= 1 ms)
(Note 1)
IDP
300
A
Drain power dissipation (Tc
= 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
731
mJ
Avalanche current
IAR
75
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.00
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 24 V, Tch = 25°C (initial), L = 100 H, RG = 25 ,
IAR = 75 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Marking
Unit: mm
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into the S2 pin.
1
2
3
4
K3439
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相关PDF资料
PDF描述
2SK3445 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET
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2SK3451-01MR 13 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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2SK3455 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
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