参数资料
型号: 2SK3439
元件分类: JFETs
英文描述: 75 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: SC-97, 4 PIN
文件页数: 2/6页
文件大小: 197K
代理商: 2SK3439
2SK3439
2004-07-06
2
Electrical Characteristics (Note 4) (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
A
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.3
2.5
V
VGS = 10 V, ID = 38 A
3.8
5.0
Drain-source ON resistance
RDS (ON)
VGS = 4 V, ID = 38 A
5.0
10
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 38 A
35
70
S
Input capacitance
Ciss
5450
Reverse transfer capacitance
Crss
620
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1850
pF
Rise time
tr
15
Turn-on time
ton
30
Fall time
tf
65
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 s
110
ns
Total gate charge
(gate-source plus gate-drain)
Qg
116
Gate-source charge
Qgs
84
Gate-drain (“miller”) charge
Qgd
VDD ≈ 34 V, VGS = 10 V, ID = 75 A
32
nC
Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement.
Source-Drain Ratings and Characteristics (Note 5) (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1, Note 5)
IDR1
75
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP1
300
A
Continuous drain reverse current
(Note 1, Note 5)
IDR2
1
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP2
4
A
Forward voltage (diode)
VDS2F
IDR1 = 75 A, VGS = 0 V
1.5
V
Reverse recovery time
trr
120
ns
Reverse recovery charge
Qrr
IDR = 75 A, VGS = 0 V,
dIDR/dt = 50 A/s
180
nC
Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
R
L
=0.
39
VDD ≈ 15 V
0 V
VGS
10 V
4.
7
ID = 38 A
VOUT
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