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参数资料
| 型号： | 2SK3449 |
| 厂商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | DC / DC Converter Applications |
| 中文描述： | 直流/直流转换器应用 |
| 文件页数： | 1/4页 |
| 文件大小： | 28K |
| 代理商： | 2SK3449 |
2SK3449
No.6672-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6672
2SK3449
Package Dimensions
unit : mm
2190
[2SK3449]
22201 TS IM TA-2919
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
DC / DC Converter Applications
1 : Source
2 : Drain
3 : Gate
SANYO : TO-126ML
4.0
1.0
1.0
8.0
1.6
0.8
0.8
0.75
1
7
3
1
1
1
3.3
3.0
0.7
2.4
4.8
1
1
2
3
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
60
±
20
4.8
19.2
PW
≤
10
μ
s, duty cycle
≤
1%
Allowable Power Dissipation
PD
1
Tc=25
°
C
10
150
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Continued on next page.
V(BR)DSS
IDSS
IGSS
VGS(off)
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=
±
16V, VDS=0
VDS=10V, ID=1mA
60
V
μ
A
μ
A
V
10
±
10
2.4
1.0
相关PDF资料 |
PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK345 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 5A I(D) | TO-220AB |
| 2SK3450-01 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:STD MOSFET |
| 2SK3450-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3451-01 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
| 2SK3451-01MR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:STD MOSFET |
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