参数资料
型号: 2SK3473
元件分类: JFETs
英文描述: 9 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-16C1B, SC-65, 3 PIN
文件页数: 1/6页
文件大小: 238K
代理商: 2SK3473
2SK3473
2004-07-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3473
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.)
High forward transfer admittance: |Yfs| = 6.5S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 720 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 k)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
9
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
27
A
Drain power dissipation (Tc
= 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
413
mJ
Avalanche current
IAR
9
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 9.35 mH, IAR = 9 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
1
3
2
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