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参数资料
| 型号： | 2SK3476 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | 2-5N1A, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 110K |
| 代理商： | 2SK3476 |
2SK3476
2002-01-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3476
VHF- and UHF-band Amplifier Applications
Output power: PO = 7.0 W (min)
Gain: GP = 11.4dB (min)
Drain efficiency: ηD = 60% (min)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Gain-source voltage
VGSS
±5
V
Drain current
ID
3
A
Power dissipation
PD (Note 1)
20
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
45~150
°C
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Caution
Please take care to avoid generating static electricity when handling this transistor.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-5N1A
Type name
1
UC
F
2
3
1. Gate
2. Source (heat sink)
3. Drain
**
Lo No.
Dot
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3479 | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3479-S | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3479-ZJ | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3479-AZ | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3479-Z-AZ | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3476(TE12L,Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 20V 3A 3-Pin PW-X T/R |
| 2SK3476_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications |
| 2SK3476TE12LQ | 制造商:Toshiba America Electronic Components 功能描述:RF POWER MOSFET |
| 2SK3479 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3479-AZ | 制造商:Renesas Electronics 功能描述:Nch 100V 83A 11m@10V TO220AB Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 83A 3-Pin(3+Tab) TO-220AB |
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