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参数资料
| 型号： | 2SK3476 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | 2-5N1A, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 110K |
| 代理商： | 2SK3476 |
2SK3476
2002-01-09
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain cut-off current
IDSS
VDS = 20 V, VGS = 0 V
5
mA
Gate-source leakage current
IGSS
VGS = 10 V
5
mA
Threshold voltage
Vth
VDS = 7.2 V, ID = 2 mA
0.55
1.05
1.55
V
Drain-source on-voltage
VDS (ON)
VGS = 10 V, ID = 75 mA
18
mV
Forward transconductance
Yfs
VDS = 7.2 V, IDS = 1 A
1
S
Input capacitance
Ciss
VDS = 7.2 V, VGS = 0 V, f = 1 MHz
53
pF
Output capacitance
Coss
VDS = 7.2 V, VGS = 0 V, f = 1 MHz
49
pF
Output power
PO
7
W
Drain efficiency
hD
60
%
Power gain
GP
VDS = 7.2 V,
Iidle = 500 mA (VGS = adjust),
f
= 520 MHz, Pi = 500 mW,
11.4
dB
Low voltage output power
POL
VDS = 6.0 V,
Iidle = 500 mA (VGS = adjust),
f
= 520 MHz, Pi = 500 mW,
5
W
Load mismatch
VDS = 10 V, PO = 7 W,
VGS = adjust, Pi = adjust,
f
= 520 MHz,
VSWR LOAD 20:1 all phase
No degradation
Note 1: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f
==== 520 MHz, VDS ==== 7.2 V, Iidle ==== 500 mA, Pi ==== 500 mW)
Pi
PO
C1
C2
C9
ZG = 50 W
C4
C12
C13
L1
R2
C14
C15
L2
VGS
VDS
C10
ZL = 50 W
C1: 15 pF
C2: 11 pF
C3: 9 pF
C4: 30 pF
C5: 30 pF
C6: 11 pF
C7: 8 pF
C8: 9 pF
C9: 2200 pF
C10: 2200 pF
C11: 2200 pF
C12: 10000 pF
C13: 10
mF
C14: 10000 pF
C15: 10
mF
L1:
f0.6 mm enamel wire, 5.8ID, 4T
L2:
f0.6 mm enamel wire, 5.8ID, 8T
R1: 2.2
W
R2: 1.5 k
W
C3
R1
C11
C5
C6
C7
C8
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3479 | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3479-S | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3479-ZJ | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3479-AZ | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3479-Z-AZ | 83 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3476(TE12L,Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 20V 3A 3-Pin PW-X T/R |
| 2SK3476_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications |
| 2SK3476TE12LQ | 制造商:Toshiba America Electronic Components 功能描述:RF POWER MOSFET |
| 2SK3479 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3479-AZ | 制造商:Renesas Electronics 功能描述:Nch 100V 83A 11m@10V TO220AB Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 83A 3-Pin(3+Tab) TO-220AB |
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