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参数资料
| 型号： | 2SK3474-01 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 33 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TFP, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 101K |
| 代理商： | 2SK3474-01 |
1
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
150
VDSX
120
Continuous drain current
ID
±33
±4.1
*4
Pulsed drain current
ID(puls]
±132
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR
*2
33
Maximum Avalanche Energy
EAS
*1
169
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
2.4
*4
150
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics atTc =25°C ( unless otherwise specified)
Thermalcharacteristics
2SK3474-01
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
for Switching
Absolute Maximum Ratings at Tc=25°C
( unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±30V
ID=11.5A
VGS=10V
ID=11.5A
VDS=25V
VCC=48V ID=11.5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
m
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
Rth(ch-a)
*4
channel to ambient
0.833
87.0
52.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=48V
ID=23A
VGS=10V
L=228 H Tch=25°C
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
150
3.0
5.0
25
250
10
100
54
70
816
1500
1730
200
300
17
26
13
20
15
23
34
51
15
23
34
51
9
13.5
12.5
19
33
1.10
1.60
0.13
0.6
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super FAP-G Series
Foot Print Pattern
(1) Gate(G)
(3) Source(S)
[power line]
(4) Drain(D)
(2) Source(S)
[signal line]
VGS=30V
Ta=25°C
VDS 150V
Ta=25°C
=
<
*4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2)
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
*1 L=0.228mH, Vcc=48V, See to Avalanche Energy Graph
*2 Tch 150°C
=
<
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