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参数资料
| 型号： | 2SK3480-Z-AZ |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-25Z, TO-220SMD, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 78K |
| 代理商： | 2SK3480-Z-AZ |
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2001
MOS FIELD EFFECT TRANSISTOR
2SK3480
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D15078EJ1V0DS00 (1st edition)
Date Published
December 2001 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3480 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 31 m
MAX. (VGS = 10 V, ID = 25 A)
RDS(on)2 = 36 m
MAX. (VGS = 4.5 V, ID = 25 A)
Low Ciss: Ciss = 3600 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±50
A
Drain Current (pulse)
Note1
ID(pulse)
±100
A
Total Power Dissipation (TC = 25°C)
PT1
84
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
34
A
Single Avalanche Energy
Note2
EAS
116
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25
, VGS = 20
→ 0 V
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
1.48
°C/W
Channel to Ambient
Rth(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3480
TO-220AB
2SK3480-S
TO-262
2SK3480-ZJ
TO-263
2SK3480-Z
TO-220SMD
Note
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3480-AZ | 50 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3480-ZJ-AZ | 50 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3480 | 50 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3480-S-AZ | 50 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3482-Z | 36000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3480-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3481 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3481-AZ | 功能描述:MOSFET N-CH 100V MP-25/TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3481-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3481-S12-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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