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参数资料
| 型号： | 2SK3507-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 22000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 |
| 封装： | TO-252, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 59K |
| 代理商： | 2SK3507-Z |
Preliminary Product Information D15387EJ1V0PM
2
2SK3507
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±16 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 11 A
2.5
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 11 A
40
50
m
RDS(on)2
VGS = 4.5 V, ID = 11 A
55
73
m
Input Capacitance
Ciss
VDS = 10 V
250
pF
Output Capacitance
Coss
VGS = 0 V
100
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
50
pF
Turn-on Delay Time
td(on)
VDD = 15 V , ID = 11 A
18
ns
Rise Time
tr
VGS(on) = 10 V
8
ns
Turn-off Delay Time
td(off)
RG = 10
48
ns
Fall Time
tf
10
ns
Total Gate Charge
QG
VDD = 24 V
8
nC
Gate to Source Charge
QGS
VGS = 10 V
2
nC
Gate to Drain Charge
QGD
ID = 22 A
3
nC
Body Diode Forward Voltage
VF(S-D)
IF = 22 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 22 A, VGS = 0 V
8.7
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
7.8
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
τ
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS(on)
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3507 | 22000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3511-S-AZ | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3511-AZ | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3511-Z | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3518-01MR | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3510-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3511(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3511-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3512-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3513-01LSC | 制造商:Fuji Electric 功能描述: |
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