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参数资料
| 型号： | 2SK3518-01MR |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 108K |
| 代理商： | 2SK3518-01MR |
1
TO-220F
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
500
Continuous drain current
ID
±6
Pulsed drain current
ID(puls]
±24
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR
*2
6
Maximum Avalanche Energy
EAS
*1
115
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
PD
Ta=25°C
2.16
Tc=25°C
32
Operating and storage
Tch
+150
temperature range
Tstg
Isolation Voltage
VISO
*5
2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3518-01MR
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=3A
VGS=10V
ID=3A
VDS=25V
VCC=300V ID=3A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
3.91
58.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
ID=6A
VGS=10V
L=5.9mH Tch=25°C
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
kVrms
500
3.0
5.0
25
250
10
100
1.15
1.50
2.5
5
430
675
60
90
2.5
4.5
10
15
5
7.5
20
30
5
7.5
15
22.5
6.5
10.5
2.5
4.5
6
1.00
1.50
0.5
1.7
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
*4 VDS 500V
*5 t=60sec, f=60Hz
<
=
*1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph
*2 Tch 150°C
=
<
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3518-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3518-01R | 制造商:Fuji Electric 功能描述:MOSFET, Standard; N-Channel; 600 V; 16 A (Max.); 64 A (Max.) |
| 2SK3519-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.65Ohm;ID +/-9A;TO-220AB;PD 135W;VGS +/-30 |
| 2SK352 | 制造商:HIT 功能描述:2SK352 HIT S3B2A |
| 2SK3520-01MRSC-P | 制造商:Fuji Electric 功能描述: |
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