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参数资料
| 型号： | 2SK3518-01MR |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 108K |
| 代理商： | 2SK3518-01MR |
3
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t[ns]
ID [A]
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
Qg [nC]
Typical Gate Charge Characteristics
VGS
[V]
400V
250V
Vcc= 100V
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)
[V]
Tch [
°C]
2SK3518-01MR
FUJI POWER MOSFET
VGS=f(Qg):ID=3A, Tch=25°C
IF=f(VSD):80s Pulse test,Tch=25°C
t=f(ID):Vcc=300V, VGS=10V, RG=10
VGS(th)=f(Tch):VDS=VGS,ID=250A
10
-1
10
0
10
1
10
2
10
3
1p
10p
100p
1n
10n
C
[F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
0.1
1
10
100
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
0
25
50
75
100
125
150
0
100
200
300
400
500
I
AS
=2.4A
I
AS
=6A
I
AS
=3.6A
E
AS
[m
J]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=50V
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PDF描述 |
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| 2SK3570-ZK | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 2SK3570-Z | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3518-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3518-01R | 制造商:Fuji Electric 功能描述:MOSFET, Standard; N-Channel; 600 V; 16 A (Max.); 64 A (Max.) |
| 2SK3519-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.65Ohm;ID +/-9A;TO-220AB;PD 135W;VGS +/-30 |
| 2SK352 | 制造商:HIT 功能描述:2SK352 HIT S3B2A |
| 2SK3520-01MRSC-P | 制造商:Fuji Electric 功能描述: |
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