- 您现在的位置：买卖IC网 > PDF目录30619 > 2SK3518-01MR (FUJI ELECTRIC CO LTD) 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | 2SK3518-01MR |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 108K |
| 代理商： | 2SK3518-01MR |
2
0
2468
10
0
1
2
3
4
RDS(on)
[
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
6.0V
6.5V
7.0V
VGS=5.5V
0.01
0.1
1
10
0.1
1
10
100
gfs
[S]
ID [A]
Typical Transconductance
Characteristics
2SK3518-01MR
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80s Pulse test,Tch=25°C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80s Pulse test, Tch=25°C
0
2
4
6
8
10
12
14
16
18
20
22
0
1
2
3
4
5
6
7
8
9
10
20V
10V
7.0V
6.5V
6.0V
ID
[A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
0.01
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RDS(on)
[
]
Tch [
°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
0
25
50
75
100
125
150
0
10
20
30
40
50
Allowable Power Dissipation
PD=f(Tc)
PD
[W
]
Tc [
°C]
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3565 | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-ZK | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 2SK3570-Z | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 2SK3570-S | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3518-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3518-01R | 制造商:Fuji Electric 功能描述:MOSFET, Standard; N-Channel; 600 V; 16 A (Max.); 64 A (Max.) |
| 2SK3519-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.65Ohm;ID +/-9A;TO-220AB;PD 135W;VGS +/-30 |
| 2SK352 | 制造商:HIT 功能描述:2SK352 HIT S3B2A |
| 2SK3520-01MRSC-P | 制造商:Fuji Electric 功能描述: |
发布紧急采购，3分钟左右您将得到回复。