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参数资料
| 型号： | 2SK3512-01SJ |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 124K |
| 代理商： | 2SK3512-01SJ |
1
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
500
Continuous drain current
ID
±12
Pulsed drain current
ID(puls]
±48
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR *2
12
Maximum Avalanche Energy
EAS*1
217
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
Ta=25°C
1.67
Tc=25°C
95
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3512-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=6A
VGS=10V
ID=6A
VDS=25V
VCC=300V ID=6A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
1.32
75.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
ID=12A
VGS=10V
L=2.77mH Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
500
3.0
5.0
25
250
10
100
0.40
0.52
5.5
11
1200
1800
140
210
6.0
9.0
17
26
15
23
34
51
711
30
45
11
16.5
10
15
12
1.00
1.50
0.7
4.5
-55 to +150
Outline Drawings
*3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150°C
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<<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*1 L=2.77mH, Vcc=50V
*2 Tch=150°C
*4VDS=500V
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P4
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