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参数资料
| 型号： | 2SK3566 |
| 元件分类： | JFETs |
| 英文描述： | 2.5 A, 900 V, 6.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10U1B, SC-67, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 214K |
| 代理商： | 2SK3566 |
2SK3566
2010-05-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3566
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 5.6 (typ.)
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
2.5
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
7.5
A
Drain power dissipation (Tc
= 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
216
mJ
Avalanche current
IAR
2.5
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C, L = 63.4 mH, IAR = 2.5 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
1
3
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3566(Q) | 功能描述:MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3566(Q,M) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3566(STA4,A,Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3566(STA4,Q,M) | 功能描述:MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3566(STA4QM) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 900V TO-220SIS |
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