参数资料
型号: 2SK3566
元件分类: JFETs
英文描述: 2.5 A, 900 V, 6.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-10U1B, SC-67, 3 PIN
文件页数: 4/6页
文件大小: 214K
代理商: 2SK3566
2SK3566
2010-05-06
4
0
100
200
300
400
500
0
4
8
12
16
20
0
5
10
VDD = 100 V
VDS
VGS
400
200
15
20
0
1
2
3
5
80
40
0
40
80
120
160
4
DRAIN
POWE
R
DISSIP
A
T
IO
N
P
D
(W
)
G
A
TE
THRESHO
LD
V
O
LT
AG
E
V
th
(V)
CASE TEMPERATURE Tc (°C)
RDS (ON) – Tc
DRAIN-S
OUR
C
E
ON
RESIS
TAN
CE
R
DS
(
O
N
)
(
Ω
)
DRAIN-SOURCE VOLTAGE VDS (V)
IDR – VDS
DRAIN
REVERS
E
CURRENT
I DR
(A)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE – VDS
CAP
A
CIT
A
N
CE
C
(pF)
CASE TEMPERATURE Tc (°C)
Vth – Tc
50
20
0
40
80
120
160
10
30
40
200
CASE TEMPERATURE Tc (°C)
PD – Tc
G
A
TE
-SO
U
RCE
VO
LT
AG
E
V
GS
(V)
TOTAL GATE CHARGE Qg (nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
DRAIN-S
O
U
RCE
VO
LT
AG
E
V
DS
(V)
COMMON SOURCE
ID = 2.5 A
Tc
= 25°C
PULSE TEST
1
0.1
10
100
1000
1
10
100
Ciss
Coss
Crss
COMMON SOURCE
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
160
40
0
40
80
120
80
20
16
12
8
4
0
ID = 1.5A
0.8
VGS = 10 V
COMMON SOURCE
PULSE TEST
0
0.1
0.4
0.3
0.5
1
3
5
10
0.8
1.2
1.6
VGS = 0V
10
3
1
COMMON SOURCE
Tc
= 25°C
PULSE TEST
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
相关PDF资料
PDF描述
2SK3596-01S 30 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET
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相关代理商/技术参数
参数描述
2SK3566(Q) 功能描述:MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK3566(Q,M) 制造商:Toshiba America Electronic Components 功能描述:
2SK3566(STA4,A,Q) 制造商:Toshiba America Electronic Components 功能描述:
2SK3566(STA4,Q,M) 功能描述:MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK3566(STA4QM) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 900V TO-220SIS