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参数资料
| 型号： | 2SK3531-01 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 112K |
| 代理商： | 2SK3531-01 |
3
2SK3531-01
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
A
VG
S(
th)
[V
]
Tch [
°C]
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=6A,Tch=25
°C
VGS
[V
]
720V
450V
Vcc= 180V
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
10
1
C
[
n
F
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0.1
1
10
IF
[A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
s pulse test,Tch=25°C
10
-1
10
0
10
1
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t[
n
s
]
ID [A]
0
25
50
75
100
125
150
0
200
400
600
800
I
AS
=2A
I
AS
=6A
I
AS
=4A
E
AS
[m
J
]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3533-01 | 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3541T2R | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3566 | 2.5 A, 900 V, 6.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3596-01S | 30 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3599-01MR | 20 A, 100 V, 0.062 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3531-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3532-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3533-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 900V;RDS(ON) 1.54 Ohms;ID +/-7A;TO-220AB;PD 225W;VGS +/- |
| 2SK3533-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3534-01MRSC-P | 制造商:Fuji Electric 功能描述: |
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