参数资料
型号: 2SK3570-Z
元件分类: JFETs
英文描述: 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: MP-25Z, TO-220SMD, 3 PIN
文件页数: 4/8页
文件大小: 82K
代理商: 2SK3570-Z
Data Sheet D16256EJ2V0DS
4
2SK3570
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID
-
Drai
n
Current
-
A
0
20
40
60
80
100
120
140
160
180
200
00.5
11.5
22.5
3
VGS = 10 V
4.5 V
Pulsed
VDS - Drain to Source Voltage - V
ID
-
Drai
n
Current
-
A
0.01
0.1
1
10
100
012345
VDS = 10 V
Pulsed
Tch = 150
°C
75
°C
25
°C
55°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(o
ff)
-
G
a
te
C
u
t-
o
ff
Vo
lta
g
e
-
V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|y
fs
|
-
Forw
ard
Trans
fe
rA
d
m
it
tanc
e
-
S
0.1
1
10
100
0.1
1
10
100
VDS = 10 V
Pulsed
Tch = 150
°C
75
°C
25
°C
55°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
m
0
5
10
15
20
25
110
100
1000
10 V
VGS = 4.5 V
Pulsed
ID - Drain Current - A
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
m
0
5
10
15
20
25
0
5
10
15
20
ID = 24 A
Pu ls e d
VGS - Gate to Source Voltage - V
相关PDF资料
PDF描述
2SK3570-S 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
2SK3570-S 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
2SK3571-ZK-AZ 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
2SK3571-S 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
2SK3571 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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