- 您现在的位置：买卖IC网 > PDF目录33501 > 2SK3572-Z 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3572-Z |
| 元件分类： | JFETs |
| 英文描述： | 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MP-25Z, TO-220SMD, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 79K |
| 代理商： | 2SK3572-Z |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3572
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16258EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
2002
The mark 5
5
5 shows major revised points.
DESCRIPTION
The 2SK3572 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
RDS(on)1 = 5.7 m
MAX. (VGS = 10 V, ID = 40 A)
Low gate charge
QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 80 A)
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±80
A
Drain Current (pulse)
Note
ID(pulse)
±300
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
52
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Note PW
≤ 10
s, Duty Cycle ≤ 1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3572
TO-220AB
2SK3572-S
TO-262
2SK3572-ZK
TO-263
2SK3572-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in Japan.
5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3572-ZK-AZ | 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 2SK3574-S | 48 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 2SK3574-ZK | 48 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 2SK3574-Z | 48 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3574-ZK-AZ | 48 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3572-ZK-E1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
发布紧急采购，3分钟左右您将得到回复。