参数资料
型号: 2SK3573
元件分类: JFETs
英文描述: 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: MP-25, 3 PIN
文件页数: 7/10页
文件大小: 207K
代理商: 2SK3573
Data Sheet D16259EJ2V0DS
4
2SK3573
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID
-
Drai
n
Current
-
A
0
50
100
150
200
250
300
350
00.5
11.5
VGS = 10 V
4.5 V
Pulsed
VDS - Drain to Source Voltage - V
ID
-
Drai
n
Current
-
A
0.01
0.1
1
10
100
1000
012
34
5
VDS = 10 V
Pulsed
Tch = 150°C
75°C
25°C
55°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(o
ff)
-
Ga
te
Cut
-of
f
V
o
lt
age
-
V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|y
fs
|
-
Forw
ard
Trans
fe
rA
d
m
it
tanc
e
-
S
0.1
1
10
100
0.1
1
10
100
Tch =
55°C
25°C
75°C
150°C
VDS = 10 V
Pulsed
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
m
0
2
4
6
8
10
1
10
100
1000
10 V
VGS = 4.5 V
Pulsed
ID - Drain Current - A
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
m
0
2
4
6
8
10
0
5
10
15
20
ID = 42 A
Pulsed
VGS - Gate to Source Voltage - V
相关PDF资料
PDF描述
2SK3573-ZK-AZ 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
2SK3573-S 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
2SK3573-ZK 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
2SK3582TK-B 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3582TK 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
相关代理商/技术参数
参数描述
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2SK3576-T1B-AT 制造商:Renesas Electronics Corporation 功能描述:
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2SK358 制造商:Toshiba 功能描述:Bulk