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参数资料
| 型号： | 2SK3575-ZK |
| 元件分类： | JFETs |
| 英文描述： | 83 A, 30 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 封装： | MP-25ZK, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 86K |
| 代理商： | 2SK3575-ZK |
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MOS FIELD EFFECT TRANSISTOR
2SK3575
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16261EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
2002
The mark
!
! shows major revised points.
DESCRIPTION
The 2SK3575 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
4.5V drive available
Low on-state resistance
RDS(on)1 = 4.5 m
MAX. (VGS = 10 V, ID = 42 A)
Low gate charge
QG = 70 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 83 A)
Avalanche capability ratings
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±83
A
Drain Current (pulse)
Note1
ID(pulse)
±332
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
105
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
57
A
Single Avalanche Energy
Note2
EAS
325
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25
, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3575
TO-220AB
2SK3575-S
TO-262
2SK3575-ZK
TO-263
2SK3575-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in Japan.
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
| 2SK358 | 制造商:Toshiba 功能描述:Bulk |
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