参数资料
型号: 2SK3642-ZK
元件分类: 小信号晶体管
英文描述: 64000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252
封装: MP-3ZK, 3 PIN
文件页数: 1/8页
文件大小: 166K
代理商: 2SK3642-ZK
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MOS FIELD EFFECT TRANSISTOR
2SK3642
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15970EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3642-ZK
TO-252 (MP-3ZK)
DESCRIPTION
The 2SK3642 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 9.5 m
MAX. (VGS = 10 V, ID = 32 A)
RDS(on)2 = 16 m
MAX. (VGS = 4.5 V, ID = 18 A)
Low Ciss: Ciss = 1100 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±64
A
Drain Current (pulse)
Note1
ID(pulse)
±190
A
Total Power Dissipation (TC = 25°C)
PT1
36
W
Total Power Dissipation
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to + 150
°C
Single Avalanche Current
Note2
IAS
25
A
Single Avalanche Energy
Note2
EAS
62
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25
, L = 100
H, VGS = 20 → 0 V
(TO-252)
相关PDF资料
PDF描述
2SK3642-ZK 64000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252
2SK364 N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK364-BL N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK365-BL N-CHANNEL, Si, SMALL SIGNAL, JFET
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相关代理商/技术参数
参数描述
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2SK3645-01MRSC 制造商:Fuji Electric 功能描述:
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