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MOS FIELD EFFECT TRANSISTOR
2SK3642
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15970EJ4V0DS00 (4th edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2002
The mark
shows major revised points.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3642-ZK
TO-252 (MP-3ZK)
DESCRIPTION
The 2SK3642 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 9.5 m
MAX. (VGS = 10 V, ID = 32 A)
RDS(on)2 = 16 m
MAX. (VGS = 4.5 V, ID = 18 A)
Low Ciss: Ciss = 1100 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±64
A
Drain Current (pulse)
Note1
ID(pulse)
±190
A
Total Power Dissipation (TC = 25°C)
PT1
36
W
Total Power Dissipation
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to + 150
°C
Single Avalanche Current
Note2
IAS
25
A
Single Avalanche Energy
Note2
EAS
62
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25
, L = 100
H, VGS = 20 → 0 V
(TO-252)