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参数资料
| 型号： | 2SK3642-ZK |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 64000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 |
| 封装： | MP-3ZK, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 166K |
| 代理商： | 2SK3642-ZK |
Data Sheet D15970EJ4V0DS
4
2SK3642
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Drain
Current
-
A
0
50
100
150
200
250
01
23
VGS = 10 V
Pulsed
4.5 V
VDS - Drain to Source Voltage - V
I
D
-
Drain
Current
-
A
0.01
0.1
1
10
100
1000
012
345
Tch =
55°C
25
°C
75
°C
150
°C
VDS = 10 V
Pulsed
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate
Cut-off
Voltage
-
V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|
y
fs
|-
Forward
Transfer
Admittance
-
S
0.1
1
10
100
0.1
1
10
100
Tch =
55°C
25
°C
75
°C
150
°C
VDS = 10 V
Pulsed
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
Source
On-state
Resistance
-m
0
5
10
15
20
25
30
1
10
100
1000
VGS = 4.5 V
Pulsed
10V
ID - Drain Current - A
R
DS(
on)
-Drain
to
Source
On-state
Resistance
-m
0
5
10
15
20
25
30
0
5
10
15
20
ID = 32 A
Pulsed
VGS - Gate to Source Voltage - V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3642-ZK | 64000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 |
| 2SK364 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK364-BL | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK365-BL | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3651-01MR | 25 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3644-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3645-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK3648-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK364-BL(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK364-V(F) | 制造商:Toshiba 功能描述:Bulk |
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