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参数资料
| 型号： | 2SK3658 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | 2-5K1B, SC-62, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 391K |
| 代理商： | 2SK3658 |
2SK3658
2006-11-17
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK3658
DCDC Converter, Relay Drive and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.23 (typ.)
High forward transfer admittance
: |Yfs| = 2.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancementmode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
2
Drain current
Pulse (Note 1)
IDP
6
A
Drain power dissipation (Tc = 25°C)
PD
0.5
W
Drain power dissipation
(Note 2)
PD
1.5
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (cha)
250
°C / W
This transistor is an electrostatic sensitive device.
Please handle with caution.
Marking
Week of manufacture
Year of manufacture: last decimal digit of the year of manufacture
Lot no.
Product no. (abbr.)
Z
H
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1B
Weight: 0.05 g (typ.)
1
3
2
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK366-BL | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK366-V | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3668-ZK | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK367 | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK367-GR | N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3658(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 60V 2A SOT89 |
| 2SK3659-AZ | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 20V 65A 3-Pin(3+Tab) TO-220 |
| 2SK365-BL(F) | 制造商:Toshiba 功能描述:Nch -50V 6mA to 14mA 80@10mV MINI Bulk 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin Mini |
| 2SK365-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3662(F) | 制造商:Toshiba 功能描述:Nch 60V 35A 0.0125@10V TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 60V 35A TO220NIS |
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