- 您现在的位置：买卖IC网 > PDF目录50004 > 2SK3658 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | 2SK3658 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | 2-5K1B, SC-62, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 391K |
| 代理商： | 2SK3658 |
2SK3658
2006-11-17
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 1 A
—
0.33
0.44
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 1 A
—
0.23
0.30
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 1 A
1.0
2.0
—
S
Input capacitance
Ciss
—
140
—
Reverse transfer capacitance
Crss
—
20
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
65
—
pF
Rise time
tr
—
140
—
Turnon time
ton
—
210
—
Fall time
tf
—
470
—
Switching time
Turnoff time
toff
—
1600
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
5.0
—
Gatesource charge
Qgs
—
3.6
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 2 A
—
1.4
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
2
A
Pulse drain reverse current
(Note 1)
IDRP
—
6
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
—
1.5
V
Reverse recovery time
trr
—
100
—
ns
Reverse recovery charge
Qrr
IDR = 2 A, VGS = 0 V
dIDR / dt = 50 A / μs
—
40
—
nC
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK366-BL | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK366-V | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3668-ZK | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK367 | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK367-GR | N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3658(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 60V 2A SOT89 |
| 2SK3659-AZ | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 20V 65A 3-Pin(3+Tab) TO-220 |
| 2SK365-BL(F) | 制造商:Toshiba 功能描述:Nch -50V 6mA to 14mA 80@10mV MINI Bulk 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin Mini |
| 2SK365-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3662(F) | 制造商:Toshiba 功能描述:Nch 60V 35A 0.0125@10V TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 60V 35A TO220NIS |
发布紧急采购，3分钟左右您将得到回复。