参数资料
型号: 2SK3659
元件分类: JFETs
英文描述: 65 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: MP-45F, TO-220, 3 PIN
文件页数: 4/8页
文件大小: 77K
代理商: 2SK3659
Data Sheet D16251EJ2V0DS
4
2SK3659
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID
-
Drai
n
Current
-
A
0
50
100
150
200
250
300
0
0.5
1
1.5
2
Pulsed
VGS = 10 V
4.5 V
VDS - Drain to Source Voltage - V
ID
-
Drai
n
C
urrent
-
A
0.01
0.1
1
10
100
1000
1
23456
Pulsed
VDS = 10 V
Tch = 150°C
75°C
25°C
55°C
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(o
ff)
Ga
te
Cut
-of
f
V
o
lt
age
-
V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|y
fs
|
-
Forw
ard
Trans
fe
rA
d
m
it
tanc
e
-
S
0.1
1
10
100
0.01
0.1
1
10
100
Pulsed
VDS = 10 V
Tch = 150°C
75°C
25°C
55°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
5
10
15
20
25
0.1
1
10
100
1000
Pulsed
VGS = 4.5 V
10 V
0
5
10
15
20
0
5
10
15
20
Pulsed
ID = 40 A
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
m
ID - Drain Current - A
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
m
VGS - Gate to Source Voltage - V
相关PDF资料
PDF描述
2SK3668-ZK 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3669 10 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3680-01 52 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
2SK3681-01 43 A, 600 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
2SK3742 Si, POWER, FET
相关代理商/技术参数
参数描述
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