参数资料
型号: 2SK3659
元件分类: JFETs
英文描述: 65 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: MP-45F, TO-220, 3 PIN
文件页数: 5/8页
文件大小: 77K
代理商: 2SK3659
Data Sheet D16251EJ2V0DS
5
2SK3659
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
0
2
4
6
8
10
12
14
-50
0
50
100
150
ID = 40 A
Pulsed
VGS = 4.5 V
10 V
Tch - Channel Temperature -
°C
C
is
s,
C
os
s,
C
rs
s
-C
a
p
a
c
itanc
e
-
pF
10
100
1000
10000
0.01
0.1
1
10
100
VGS = 10 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
m
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(
o
n
),
t
r,
t
d
(o
ff)
,t
f-
S
w
itc
h
in
g
Tim
e
-n
s
1
10
100
1000
0.1
1
10
100
td(on)
tr
td(off)
tf
VDD = 10 V
VGS = 10 V
RG = 10
ID - Drain Current - A
V
DS
-
Drai
n
t
o
S
ourc
e
V
o
lt
age
-
V
0
4
8
12
16
20
0
5
10
15
20
25
30
35
0
2
4
6
8
10
ID = 65 A
VDS
VDD = 16 V
10 V
VGS
QG - Gate Charge - nC
V
GS
-
Ga
te
t
o
S
our
c
e
V
o
lt
age
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
ISD
-
D
io
de
Fo
rw
a
rd
C
u
rr
ent
-
A
0.01
0.1
1
10
100
1000
00.5
11.5
Pulsed
VGS = 10 V
0 V
trr
-
Rev
e
rs
e
Re
cov
e
ry
T
im
e
-n
s
1
10
100
1000
0.1
1
10
100
VGS = 0 V
di/dt = 100 A/
s
VSD - Source to Drain Voltage - V
ID - Drain Current - A
相关PDF资料
PDF描述
2SK3668-ZK 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3669 10 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3680-01 52 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
2SK3681-01 43 A, 600 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
2SK3742 Si, POWER, FET
相关代理商/技术参数
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